Karya
Judul/Title Novel lead–tin telluride (PbSnTe) thermoelectric material manufactured via horizontal vapour phase growth technique (HVPG)
Penulis/Author Sopheap Sam (1); Laurence A. Gan Lim (2); Sundararajan Thirumalai (3); Ardi Wiranata, S.T., M. Eng., Ph.D (4); Prof. Ir. Jamasri, Ph.D., IPU., ASEAN Eng. (5); Dr. Ir. Jayan Sentanuhady, S.T., M.Eng., IPU., ASEAN Eng. (6); Prof. Gil Nonato C. Santos (7); Ir. Muhammad Akhsin Muflikhun, S.T., MSME., Ph.D (8)
Tanggal/Date 2024
Kata Kunci/Keyword
Abstrak/Abstract Pb0.33Sn0.67Te is an important semiconductor thermoelectric material. It was successfully synthesized through a HVPG technique. The growth temperature and time are varied in the range of 1000 C–1200 C and 4–8 h, respectively. A 2k factorial design of experiments is used to study the effect of material thermoelectric performance (ZT). Investigations revealed that maximum ZT of 0.084 can be achieved at 1200 C growth temperature of and 4 h anneal time of. The crystals showed high ZT value, which is likely to have contributed to the ZT enhancement. It showed that Pb0.33Sn0.67Te manufactured via HVPG applied for thermoelectric applications.
Rumpun Ilmu Teknik Mesin (dan Ilmu Permesinan Lain)
Bahasa Asli/Original Language English
Level Internasional
Status
Dokumen Karya
No Judul Tipe Dokumen Aksi
1Novel lead–tin telluride (PbSnTe) thermoelectric material manufactured via horizontal vapour phase growth technique (HVPG).pdf[PAK] Full Dokumen