| Abstrak/Abstract |
This research aims to develop an efficient dc-dc
dual active bridge (DAB) converter circuit for charging electric
vehicles (EVs) from 400 V to 115 V, focusing on improving
efficiency and optimizing design using GaN transistors. The
selection of GaN transistor GS66508T, a 650 V enhancement
mode power transistor with superior specifications, such as
RDS(on) 50 mΩ, IDS(max) 30 A, the need for simple gates (0 V
to 6 V), transient-resistant gates (-20 / +10 V), and very high
switching frequencies (> 10 MHz), took center stage in finding
effective solutions for faster and more efficient EV charging.
The successful implementation in the simulation design of the
DAB dc-dc converter resulted in optimal performance with a
stable output voltage at 113.8 V, an output current of 12.4 A, an
output power of 1410.67 W, and an overall efficiency of 97.46%,
strengthening the reliability and efficiency of DAB designs for
charging electric vehicles |
