| Penulis/Author |
KHAERUL UMAM (1); Prof. Sholihun, S.Si., M.Sc., Ph.D.Sc. (2); Prof. Drs. Pekik Nurwantoro, M.S., Ph.D. (3); Moh. Adhib Ulil Absor, S.Si., M.Sc., Ph.D. (4); Dr.Sc. Ari Dwi Nugraheni, S.Si., M.Si. (5); Romy Hanang Setya Budhi, S.Si., M,Sc., Ph.D. (6) |
| Abstrak/Abstract |
The effects of biaxial strain on the electronic properties of silicene are studied by
carrying out the density-functional-theory (DFT) calculations. We simulate planar and buckled
structures and find that the buckled structure is more stable than the planar one. We next apply
biaxial strain up to 12% and find that the applied tensile and compressive strains below 8% do
not change the electronic structure. At tensile strains of 8% or more, the Dirac point at K-point
shifts up from the Fermi level, indicating that such tensile strain behaves as p-type doping.
Meanwhile at the compressive strains of 8% or more, the Dirac point at K-point shifts down
from the Fermi level, indicating that the such compressive strain behaves as n-type doping. We
find that silicene remains stable for the applied strain up to 12%. We also calculate the Fermi
velocity around K-point, which is found to be 9.1 × 105 m/s. |
